SiC Epi-wafer is made from a layer of high-quality SiC single crystal thin film grown on the self-made SiC substrate using SiC epitaxial equipment. After wafer manufacturing, packaging, testing and other processes, SiC Epi-wafers can be made into SiC power devices.
SiC Epi-wafers are made into SiC diodes, SiC MOSFET and other power devices after homogeneous epitaxial growth, wafer manufacturing, packaging and testing, and other processes. They are suitable for high temperature, high voltage, high current and other working environments, and are widely used in new energy vehicles, charging piles, photovoltaic wind power, energy storage, rail transit, smart grid, industrial power supply, industrial drive, white goods and other fields.