Conductive SiC substrate is a monocrystalline formed by conductive SiC crystal processing through cutting, grinding, polishing, cleaning and other processes. As an important raw material for the third-generation semiconductors, monocrystalline substrate wafers can be made into SiC based power devices after homogeneous epitaxial growth, wafer manufacturing, packaging and testing and other processes. Currently, 6-inch conductive substrates are the mainstream size product in the industry. Our 6-inch conductive substrates have reached international standards in quality and have a very high cost-effectiveness. After comprehensive verification by downstream customers, the product performance is stable and reliable, and significant results have been achieved in automotive grade and industrial applications.

SiC substrate materials are made into SiC diodes, SiC MOSFET and other power devices after homogeneous epitaxial growth, wafer manufacturing, packaging and testing， and other processes. They are suitable for high temperature, high voltage, high current and other working environments, and are widely used in new energy vehicles, charging piles, photovoltaic wind power, energy storage, rail transit, smart grid, industrial power supply, industrial drive, white goods and other fields.